2D layered materials - Lehrstuhl für Experimentalphysik

Two-dimensional(2D) layered materials are crystals with strong intralayer bonds but only weak,van-der-Waals type interlayer bonds, such as graphite, MoS₂, orhexagonal boron nitride (hBN). They can be exfoliated to an atomically thinmonolayer and stacked into heterostructures with almost arbitrary choice ofcombinations. Besides graphene, the most famous 2Dmaterials are transition metal dichalcogenides (TMDCs) and specifically MoS₂,MoSe₂, WS₂, and WSe₂. These materials have intriguing optical and electroniccharacteristics. For example, they are indirect semiconductors in the bulk formbut show strong excitonic emission in the visible range in their monolayerform. We are interested in their opticalproperties, including exciton-phonon coupling, and in their interactions inheterostructures with other layers.

Projekte:

Laufzeit: 1. April 2025 - 30. März 2028
Mittelgeber: Deutsche Forschungsgemeinschaft (DFG)
Projektleitung: Janina Maultzsch

Prof. Dr. Janina Maultzsch

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Kontaktpersonen:

Janina Maultzsch

Beteiligte Wissenschaftler:

Janina Maultzsch
Roland Gillen

Publikationen:

Wolff S., Gillen R., Assebban M., Abellan Saez G., Maultzsch J.:
Two-Dimensional Antimony Oxide
In: Physical Review Letters 124 (2020), S. 126101
ISSN: 0031-9007
DOI: 10.1103/PhysRevLett.124.126101
Tornatzky H., Gillen R., Uchiyama H., Maultzsch J.:
Phonon dispersion of MoS2
In: Physical Review B 99 (2019), S. 144309
ISSN: 2469-9950
DOI: 10.1103/PhysRevB.99.144309
URL: https://arxiv.org/abs/1809.03381
Gillen R., Maultzsch J.:
Interlayer excitons in MoSe2/WSe2 heterostructures from first principles
In: Physical Review B 97 (2018)
ISSN: 2469-9950
DOI: 10.1103/PhysRevB.97.165306
Gillen R., Maultzsch J.:
Light-Matter Interactions in Two-Dimensional Transition Metal Dichalcogenides: Dominant Excitonic Transitions in Mono- and Few-Layer MoX2 and Band Nesting
In: IEEE Journal of Selected Topics in Quantum Electronics 23 (2017)
ISSN: 1077-260X
DOI: 10.1109/JSTQE.2016.2604359
Schneider E., Watanabe K., Taniguchi T., Maultzsch J.:
Interlayer Raman modes in twisted bilayer transition metal dichalcogenides
In: Physical Review B 110 (2024), Art.Nr.: 125431
ISSN: 0163-1829
DOI: 10.1103/PhysRevB.110.125431

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